Degradation of the thermal conduction path is one of the most common failure mechanisms of power semiconductor packages. Typically, solder fatigue happens due to the thermo-mechanical stresses at the interfacing contacts resulting from mismatched coefficient of thermal expansions between different materials (which make up the heat flow path) and causes cracking. Thermal transient measurement using Simcenter™ Micred™ T3STER hardware is a common characterization method for heat conduction path in power semiconductor packages.
Cracking Explained – Simcenter
Abstract
What you get from this white paper
Benefits:
- Quantification of cracked areas in the thermal path of high-power multi-chip modules using Simcenter Micred Power Tester hardware